14 - 17 June


Final programme online! Download PDF here:

For registration, please visit the registration website

What Is WOCSDICE 2021 All About?

The aim in the three days of WOCSDICE 2021 is to bring together engineers and scientists working in the field of low-dimensional compound semiconductor devices. Topics range from state-of-the-art materials and processing, wide bandgap power and RF electronics, advanced photonic and energy harvesting devices on both the experimental and simulation side. Students are especially encouraged to attend and present their latest results.

The topics to be addressed include, but are not necessarily limited to the following:

  • Compound semiconductor-based devices including wide bandgap semiconductors

  • One- (1D) and two-dimensional (2D) layered devices and their materials

  • Device modelling

  • Device processing

  • Device reliability

  • Device packaging

  • Device characterization

  • Applications of devices and structures

  • High-frequency devices

  • Power devices

  • Novel device and circuit concepts

  • Optoelectronic devices

The workshop has a long-standing history and has been held annually in Europe since it was first organized in 1973. It was lately hosted in Catania, Italy (2011), Porquerolles, France (2012), Warnemünde, Germany (2013), Delphi, Greece (2014), Slovakia (2015), Aveiro, Portugal (2016), Gran Canaria, Spain (2017), Bucharest, Romania (2018) and Cabourg, France (2019).

For any enquiry please contact us:


Daniel Granados

IMDEA, Spain

Rashaunda Henderson

UT Dallas, USA

Shahed Reza

Sandia, USA

Joana Catarina Mendes

Uni. of Aveiro, Portugal

Clemens Ostermaier

Infineon, Austria

David Eon

NEEL, France

Henri Happy

IEMN, France

Masataka Higashiwaki

NICT, Japan

Raffaella Lo Nigro

CNR, Italy


7 April 2021

Extended deadline for short abstract submission

9 April 2021

Notification of acceptance

23 April 2021

Early registration deadline with reduced fees

30 April 2021

Extended abstract submission deadline



14 June


Opening & Ga2O3 power electronics

Early Afternoon

GaN and SiC power electronics

Late Afternoon

GaN and GaAs RF electronics


15 June


GaN RF and microwave electronics

Early Afternoon

2D materials and electronics

Late Afternoon

Vertical and next generation electronics


16 June


New materials and defects

Early Afternoon

Light-emitting materials

Late Afternoon

Low dimensional materials and devices


17 June


Diamond materials and devices

Early Afternoon

Materials and device surface/interfaces

Late Afternoon

New materials & Closing

Conference Chairman

Michael Uren - University of Bristol, United Kingdom

Local Arrangement Chair

Dong Liu - University of Bristol, United Kingdom

Operations Manager

Markus Wohlfahrt - University of Bristol, United Kingdom

Steering Committee

Colombo Bolognesi - ETH Zürich, Switzerland 
Fernando Calle - Universidad Politécnica de Madrid, Spain 
Daniel Donoval - Slovak University of Technology in Bratislava, Slovakia

Mircea Dragoman - National Institute for R&D in Microtechnologies, Bucharest 
Jean-Yves Duboz - CNRS-CRHEA, France 
Benito González - Universidad de Las Palmas de Gran Canaria, Spain
Hans L. Hartnagel - Technical University of Darmstadt, Germany

Zekentes Konstantinos - FORTH, Greece 
Didier Lippens - Université de Lille 1, France 
Koichi Maezawa - University of Toyama, Japan

Farid Medjdoub - IEMN Lille, France 
Joana Catarina Mendes - IT Aveiro, Portugal 
Gaudenzio Meneghesso - University of Padova, Italy 
Elias Munoz - Universidad Politécnica de Madrid, Spain 
Dimitris Pavlidis - Florida International Univeristy, USA 
Edwin Piner - Texas State University, USA 
Adrian Porch - Cardiff University, United Kingdom 
Jan Stake - Chalmers University of Technology, Sweden 
Andrei Vescan - RWTH Aachen University, Germany 
Hans-Joachim Würfl - Ferdinand-Braun-Institut, Germany 
Konstantinos Zekentes - Foundation for Research and Technology-Hellas, Greece